Techniques for device cooling in an optical sub-assembly

ABSTRACT

An optical sub-assembly includes a diode submount structure, a diode mounted to the diode submount, and a thermoelectric cooler (TEC). The TEC is in thermal contact with the diode, and the diode is positioned between the diode submount structure and the TEC.

FIELD OF INVENTION

The present disclosure is related to optical sub-assemblies for diodesand packaging methods for such optical sub-assemblies.

BACKGROUND

A number of non-trivial challenges arise when designing and operatingoptical sub-assemblies for laser diodes. Heat generated by the laserdiodes can decrease efficiency. In conventional optical sub-assemblies,a diode submount structure is mounted on a TEC device, and diodes arepositioned on the submount. According to such designs, the TEC cools thelaser diodes through the submount structure, and the diodes dissipateheat generally only in one direction through the submount structure andthe TEC device. Therefore, a need exists for an optical sub-assemblythat more effectively cools diode devices.

SUMMARY

The present disclosure describes various embodiments of opticalsub-assemblies and methods that, among other things, increase cooling oflaser diodes within such sub-assemblies.

According to one aspect, the present disclosure relates to an opticalsub-assembly including a diode submount structure; a diode mounted tothe diode submount; and a thermoelectric cooler (TEC) in thermal contactwith the diode, wherein the diode is positioned between the diodesubmount structure and the TEC. In an embodiment, the diode submountstructure is a silicon photonics (SiPho) die. In an embodiment, theSiPho die includes a waveguide, wherein light from the diode can exitthe optical sub-assembly via the waveguide. In an embodiment, the SiPhodie is positioned over the TEC and overhangs the TEC to prevent anunderfill material from covering the waveguide. In an embodiment, theSiPho die overhangs the TEC by between 1-2 mm. In an embodiment, theunderfill material is a thermally conductive and electrically insulatingmaterial. In an embodiment, the diode submount structure is an aluminumnitride sub-mount structure. In an embodiment, the TEC directly coolsthe diode mounted between the diode submount structure and the TEC. Inan embodiment, the TEC includes a top surface facing away from a housingwith electrical interconnects, and a bottom surface mounted to thehousing, and the diode is directly connected to the top surface of theTEC. In an embodiment, the optical sub-assembly also includes one ormore integrated circuits electrically connected to the diode submountstructure. In an embodiment, the one or more integrated circuits arepositioned between the diode submount structure and the TEC.

According to another aspect, the present disclosure relates to a methodof cooling an optical sub-assembly including operating a diode mountedto the diode submount; and cooling the diode with a thermoelectriccooler (TEC) in thermal contact with the diode, wherein the diode ispositioned between the diode submount structure and the TEC. In anembodiment, the diode submount structure is a silicon photonics (SiPho)die. In an embodiment, the SiPho die includes a waveguide, and lightfrom the diode exits the SiPho die via the waveguide. In an embodiment,the SiPho die is positioned over the TEC and overhangs the TEC toprevent an underfill material from covering the waveguide. In anembodiment, the diode submount structure is an aluminum nitridesub-mount structure. In an embodiment, cooling the diodes includesdirectly cooling the diode mounted between the diode submount structureand the TEC. In an embodiment, the method also includes cooling one ormore integrated circuits electrically connected to the diode submountstructure.

According to another aspect, the present disclosure relates to a systemfor cooling diodes, including: a housing with electrical interconnects;a thermoelectric cooler (TEC) positioned on the housing; a siliconphotonics (SiPho) die; and a number of diodes mounted to the SiPho die.Each of the diodes is positioned between the SiPho die and the TEC andin direct thermal communication with both the SiPho die and the TEC. Inan embodiment, the system also includes one or more integrated circuitspositioned between the SiPho die and the TEC and in direct thermalcommunication with both the SiPho die and the TEC.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the various examples, reference isnow made to the following detailed description taken in connection withthe accompanying drawings in which like identifiers correspond to likeelements.

FIG. 1 illustrates an example optical sub-assembly according toembodiments of the present disclosure.

FIG. 2 is a flow diagram of an example method of cooling an opticalsub-assembly, according to an embodiment of the present disclosure.

FIG. 3 is a three dimensional model of an example optical sub-assemblyaccording to embodiments of the present disclosure.

FIGS. 4A-4B show thermal field models of an example sub-assemblyaccording to embodiments of the present disclosure compared toconventional techniques.

DETAILED DESCRIPTION

The present disclosure describes various examples of opticalsub-assemblies and packaging methods for optical sub-assemblies. In someembodiments, the optical sub-assemblies disclosed herein have goodthermal dissipation capabilities and deliver high optical power with lowtotal electrical power consumption. The optical sub-assemblies disclosedinclude a diode submount structure, such as a silicon photonics (SiPho)die or ceramics substrate, and at least one laser or semiconductoroptical amplifier (SOA) diode. Typically, the ceramics substrate is madeof high thermal conductive materials such as aluminum nitride (AlN) withmetallization on the surface for electrical connection. The opticalsub-assemblies also include one or more thermoelectric coolers (TEC) orheat sink.

In one embodiment, a SiPho die used as a submount for the laser diodescan include at least one waveguide device to couple and transmit thelight from the laser diode. One electrode of the laser diode can bebonded on the SiPho die, and the lasering light can be coupled into thewaveguide in the SiPho die. Another electrode of the laser diode can beattached to the TEC such that the TEC can control the laser diodetemperature. A thermally conductive epoxy underfill material or soldermaterial (such as Sn—Au, Pb—Sn, Sn—Ag—Cu, Indium, etc. metal material oralloys) can be dispensed between the SiPho die and the TEC in order tofurther cool the laser temperature effectively and boost the opticalpower output. In some embodiments, any thermally conductive andelectrically insulating material can be used, such as fillers, gel typepastes, phase change thermal interface materials, or a liquid phasematerial that is electrically insulating and thermally conductive. Aliquid phase material could be held in place, for example, by thesurface tension because of the small gaps between the silicon submountstructure and the TEC device.

FIG. 1 illustrates an example optical sub-assembly 100 according toembodiments of the present disclosure. In this embodiment, the TEC 103is positioned on a housing 101, and the diode submount structure 105,such as a SiPho die, is positioned such that one or more laser diode 107and SOA diode 108 are sandwiched between the submount structure 105 andthe TEC 103. This optical sub-assembly cools the laser diode 107 and SOAdiode 108 more effectively, delivers higher optical power output, andconsumes less total electrical energy. In the embodiment shown in FIG. 2, both the laser diode 107 and the SOA diode 108 are edge light emittingdevices. In some embodiments, as shown in FIG. 1 , one or more IC die109 can also be positioned between the submount structure 105 and theTEC 103. In such cases, the TEC can also directly cool the IC die 109.Although only one TEC is shown in this embodiment, one skilled in theart will appreciate that multiple TECs can be implemented within thescope of the present disclosure.

In some embodiments, the submount structure 105 can include a SiPho die,or an AlN submount structure. An electrical circuit can be printed onthe top of an AlN layer of the TEC cooling side. In another embodiment,the SiPho die has TSV structure inside the silicon, and IC die 109 canbe on another side of the SiPho die.

The TEC 103 can include a top surface facing away from the housing 101and a bottom surface that is mounted on or in contact with the housing101. One or more electrical interconnects can be made between the TEC103 and the housing 101, as shown in FIG. 1 . The laser diodes 107 andSOA diode 108 can be formed on or in contact with the top surface of theTEC 103.

In an embodiment, the submount structure 105 includes a SiPho die, whichalso includes a waveguide. The waveguide can be used to guide light fromthe laser diode 107 and SOA diode 108 out of the optical sub-assembly100. The SiPho die can be positioned over the TEC 103 to create anoverhang 113, in order to prevent an underfill material 115 fromcovering the waveguide. As can be seen in FIG. 1 , solder connections111 can be used to connect the SiPho die with the TEC 103, and anunderfill material 115 can fill the space between the SiPho die and theTEC 103. In some embodiments, the SiPho die can overhang the TEC bybetween 1-2 mm. The underfill material 115 can be a thermally conductivematerial in order to provide further cooling and heat dissipation forthe SiPho die and the laser diode 107 and SOA diode 108.

In an embodiment, the laser diode 107 or SOA diode 108 could be p-side(anode) bonded on the Sipho die with SN—AU alloy or other solderingmaterial, or thermally conductive paste like Ag-epoxy. The n-side(cathode) of the diodes could be bonded on the TEC top AlN ceramicsusing Sn—Au alloy or soldering material, or thermally conductive epoxypaste. In such an embodiment, the heat generated in the quantum wellregion of the diodes spreads in both directions - up to the Sipho dieand also down to the AlN ceramics, which is the top of the TEC devices.Between the Sipho die 105 and the TEC 103, a thermally conductive pasteor underfill epoxy material 115 can be dispensed to facilitate heatspread horizontally within the material 105 and vertically from theSipho die to AlN ceramics on the TEC 103.

In an embodiment, the underfill material 115 could be a thermallyconductive epoxy such as commercially available Masterbond two-partepoxy EP30TC, which has a thermal conductivity of about 2.8 W/k.m withaluminum nitride as the thermal conductive fillers. When diamond is usedas the filler, the underfill material conductivity can be as high as6W/k.m such as commercial YINCAE SMT 158D8 underfill. The typicalunderfill material 115 bond line thickness between the Sipho die and TEC105 can be around 100 um or less, which is largely defined by the laserdiode 107 and SOA diode 108 thickness, which is typically around 100 umor less. These dimensions are merely used as examples, and are notintended to limit the invention to a particular size range forcomponents. Compared to conventional subassemblies, the techniquesdisclosed herein provide significantly improved thermal dissipation fromthe laser diode 107 and SOA diode 108 junction to the TEC 105 or theoutside environment.

In some embodiments, the submount structure 105 also serves as a heatspreader or heat dissipater for the diodes 107, 108, along with the TEC105. The heat generated in the laser quantum well, or junction, which isa hot spot and in a very small volume of the material, can spread outfrom the junction to the laser body and out to the submount. The TECdevice 105 can include many pellets (e.g. BiTe diodes), in someembodiments, sandwiched between top and bottom ceramics (e.g. AlN). Thetop and bottom AlN ceramics in the TEC can also further spread out heatfor more effective cooling by the TEC.

FIG. 2 is a flow diagram of an example method of cooling an opticalsub-assembly, according to an embodiment of the present disclosure.

The method begins at operation 201 by operating the laser diode 107 andSOA diode 108. As discussed above, the diodes 107, 108 are positionedbetween a TEC 103 and a diode submount structure 105, such as an AlNsubmount structure or a SiPho die. In some embodiments, the submountstructure 105 is a SiPho die that includes a waveguide, and the laserdiode 107 and SOA diode 108 can emit light out of the SiPho die via thewaveguide. In such embodiments, the SiPho die can overhang the TEC 103by between 1-2 mm in order to prevent underfill material 115 fromcovering the waveguide.

The method continues at operation 203 with cooling the laser diode 107and/or SOA diode 108 sandwiched between the submount material (AlN orsilicon) and TEC top layer AlN. Compared to the prior art, thesandwiched packaging structure disclosed herein achieves lower thermalimpedance (from the laser junction to TEC top AlN cold surface). Thereduction in thermal impedance can be the result of heat spreading inmore than one direction in the sandwiched structure — from the junctionto the TEC AlN, as well as from the junction to the top submount.Additional cooling can be provided by the conductive underfill materialbetween the submount and the TEC AlN cold side. The thermal performancedifference is discussed in more detail in reference to FIGS. 4A-4Bbelow.

In some embodiments, the method optionally continues at operation 205with cooling one or more IC die 109 using the TEC 103. In someembodiments, the IC die 109 can also be positioned between the submountstructure 105 and the TEC 103. In such cases, the TEC 103 can alsodirectly cool the IC die 109.

FIG. 3 is a three dimensional model of an example optical sub-assemblyaccording to embodiments of the present disclosure. In this embodiment,a laser 307 is sandwiched between a silicon die or submount structure305 and a TEC device 303. A thermally conductive underfill material 315is used to fill the space between the submount structure 305 and the TECdevice 303, as well as improve heat dissipation. In the embodiment shownin FIG. 3 , a common n-type InP substrate based InGaAsP edge emittingquantum well laser diode was used with dimensions of 400 um length, 250um width, and 100 um thickness. This laser 307 can be attached on thesilicon die 305 with p-side attached using Au—Sn solder alloy, and withthe laser light coupled into the silicon waveguide with high positionaltolerance (typically sub-micrometer in all x/y/z directions) for highcoupling efficiency. A small volume of optically transparent and indexmatching epoxy may also be dispensed between the laser output andwaveguide for further improving the light coupling efficiency. The TECtop AlN cold side can include dimensions of 3000×2000 um area, and 1000um thickness, in this example embodiment. One skilled in the art willrecognize that the TEC could be replaced by a heat sink in someembodiments, if the laser diode was passively cooled by thermalconvection and radiation.

The laser 307 is sandwiched between the silicon die 305 and TEC 303 topAlN cold side. Accounting for the thickness of the laser 307, the 100 umheight gap between silicon die 305 and TEC 303 top AlN was filled withthermally conductive underfill material 315. This material could beunderfill type epoxy with thermally conductive but electricallyinsulating fillers, or gel type paste or phase change thermal interfacematerials.

FIGS. 4A-4B show thermal field models of an example sub-assemblyaccording to embodiments of the present disclosure compared toconventional techniques. FIG. 4A illustrates a thermal model of thedesign described in FIG. 3 , where the laser is sandwiched between thesilicon die 401 and the TEC device 403. In comparison, FIG. 4Billustrates a thermal model of a design where a laser 406 is mounted ona silicon die 402, which is then mounted on a TEC device 404.

In the thermal field modelling, for simplicity, the laser thermal heatgeneration during operation is assumed to be 1 Watt. All the heat wasgenerated in the laser quantum well active junction region uniformly.The TEC top cold AlN was set at 50° C., and air temperature at 25° C.All the heat convection and radiation were set to normal conditions. Themodelled FEM (Finite Element Modeling) thermal fields are shown in FIGS.4A-4B. In the thermal FEM modeling, a gap filler material with thermalconductivity of 5 K/W.m was used for FIG. 4A.

Comparing the performance of the two designs, the laser junction activeregion temperature for the embodiments disclosed herein and shown inFIG. 4A is around 95° C. This is almost 20 degrees lower compared to thedesign in FIG. 4B, which had a laser junction active region temperatureas high as around 114° C. In other words, the packaging techniquesdisclosed herein provide significantly improved cooling over alternativedesigns.

The preceding description sets forth numerous specific details such asexamples of specific systems, components, methods, and so forth, inorder to provide a thorough understanding of several examples in thepresent disclosure. It will be apparent to one skilled in the art,however, that at least some examples of the present disclosure may bepracticed without these specific details. In other instances, well-knowncomponents or methods are not described in detail or are presented insimple block diagram form in order to avoid unnecessarily obscuring thepresent disclosure. Thus, the specific details set forth are merelyexemplary. Particular examples may vary from these exemplary details andstill be contemplated to be within the scope of the present disclosure.

Any reference throughout this specification to “one example” or “anexample” means that a particular feature, structure, or characteristicdescribed in connection with the examples are included in at least oneexample. Therefore, the appearances of the phrase “in one example” or“in an example” in various places throughout this specification are notnecessarily all referring to the same example.

The term “coupled,” along with its derivatives, is used to indicate thattwo or more elements interact with each other. These coupled elementsmay or may not be in direct physical or electrical contact with eachother.

Although the operations of the methods herein are shown and described ina particular order, the order of the operations of each method may bealtered so that certain operations may be performed in an inverse orderor so that certain operation may be performed, at least in part,concurrently with other operations. Instructions or sub-operations ofdistinct operations may be performed in an intermittent or alternatingmanner.

The above description of illustrated implementations of the invention,including what is described in the Abstract, is not intended to beexhaustive or to limit the invention to the precise forms disclosed.While specific implementations of, and examples for, the invention aredescribed herein for illustrative purposes, various equivalentmodifications are possible within the scope of the invention, as thoseskilled in the relevant art will recognize. The words “example” or“exemplary” are used herein to mean serving as an example, instance, orillustration. Any aspect or design described herein as “example” or“exemplary” is not necessarily to be construed as preferred oradvantageous over other aspects or designs. Rather, use of the words“example” or “exemplary” is intended to present concepts in a concretefashion. As used in this application, the term “or” is intended to meanan inclusive “or” rather than an exclusive “or”. That is, unlessspecified otherwise, or clear from context, “X includes A or B” isintended to mean any of the natural inclusive permutations. That is, ifX includes A; X includes B; or X includes both A and B, then “X includesA or B” is satisfied under any of the foregoing instances. In addition,the articles “a” and “an” as used in this application and the appendedclaims should generally be construed to mean “one or more” unlessspecified otherwise or clear from context to be directed to a singularform. Furthermore, the terms “first,” “second,” “third,” “fourth,” etc.as used herein are meant as labels to distinguish among differentelements and may not necessarily have an ordinal meaning according totheir numerical designation.

What is claimed is:
 1. An optical sub-assembly with efficient heatdissipation from the heat generating components, comprising: a housingcomprising one or more electrical connections; a thermoelectric cooler(TEC) mounted to the housing and in electrical contact with the housing;a light emitting diode that emits an optical beam; a photonics diecomprising a waveguide, wherein the optical beam emitted by the lightemitting diode exits the optical sub-assembly via the waveguide; athermally conductive underfill disposed between the photonics die andthe TEC to facilitate heat transfer between the light emitting diode andthe photonics die; wherein the TEC comprises a top surface and a bottomsurface such that the bottom surface of the TEC is attached to thehousing and the top surface of the TEC is attached to the light emittingdiode; wherein the photonics die is attached to the TEC, with the lightemitting diode and the underfill interposed therebetween, such that afirst surface of the light emitting diode is in direct contact with theTEC and a second surface of the light emitting diode opposite the firstsurface of the light emitting diode is in direct contact with the withphotonics die; and wherein the photonics die is offset from the TEC in ahorizontal direction, providing an overhang of the photonics die overthe TEC, such that the underfill does not interfere with the opticalbeam exiting the waveguide.
 2. The optical sub-assembly of claim 1,wherein the photonics die is a silicon photonics (SiPho) die.
 3. Theoptical sub-assembly of claim 1, wherein the photonics die overhangs theTEC by between 1-2 mm.
 4. The optical sub-assembly of claim 1, whereinthe underfill is a thermally conductive and electrically insulatingepoxy.
 5. The optical sub-assembly of claim 1, wherein the lightemitting diode is in direct thermal communication with both thephotonics die and the TEC, and the TEC directly cools the light emittingdiode.
 6. The optical sub-assembly of claim 1, further comprising one ormore integrated circuits electrically connected to the photonics die. 7.The optical sub-assembly of claim 6, wherein the one or more integratedcircuits are disposed directly between the photonics die and the TEC. 8.The optical sub-assembly of claim 1, further comprising a semiconductoroptical amplifier (SOA) disposed directly between the TEC and thephotonics die.
 9. The optical sub-assembly of claim 1, furthercomprising a plurality of light emitting diodes disposed directlybetween the TEC and the photonics die.
 10. A method of cooling anoptical sub-assembly comprising: operating a light emitting diode of theoptical sub-assembly to emit an optical beam, wherein the light emittingdiode is attached to a photonics die, and wherein the optical beamemitted by the light emitting diode exits the optical sub-assembly viathe waveguide; cooling the light emitting diode with a thermoelectriccooler (TEC) in direct contact with the light emitting diode, whereinthe TEC is mounted to a housing and is in electrical contact with thehousing; wherein a thermally conductive underfill disposed between thephotonics die and the TEC to facilitate heat transfer between the lightemitting diode and the photonics die; wherein the TEC comprises a topsurface and a bottom surface such that the bottom surface of the TEC isattached to the housing and the top surface of the TEC is attached tothe light emitting diode; wherein the photonics die is attached to theTEC, with the light emitting diode and the underfill interposedtherebetween, such that a first surface of the light emitting diode isin direct contact with the TEC and a second surface of the lightemitting diode opposite the first surface of the light emitting diode isin direct contact with the with photonics die; and wherein the photonicsdie is offset from the TEC in a horizontal direction, providing anoverhang of the photonics die over the TEC, such that the underfill doesnot interfere with the optical beam exiting the waveguide.
 11. Themethod of claim 10, wherein the photonics die is a silicon photonics(SiPho) die.
 12. The method of claim 11, wherein the photonics dieoverhangs the TEC by between 1-2 mm.
 13. The method of claim 12, whereinthe underfill is a thermally conductive and electrically insulatingepoxy.
 14. The method of claim 10, wherein the optical sub-assemblyfurther comprises one or more integrated circuits electrically connectedto the photonics die.
 15. The method of claim 14, further comprising:cooling the one or more integrated circuits electrically connected tothe photonics die via direct thermal communication with the photonicsdie and the TEC.
 16. The method of claim 10, wherein cooling the lightemitting diode comprises providing the light emitting diode in directthermal communication with both the photonics die and the TEC, and thewherein TEC directly cools the light emitting diode.
 17. A system forcooling diodes, comprising: a housing comprising one or more electricalconnections; a thermoelectric cooler (TEC) mounted to the housing and inelectrical contact with the housing; a light emitting diode that emitsan optical beam; a photonics die comprising a waveguide, wherein theoptical beam emitted by the light emitting diode exits the opticalsub-assembly via the waveguide; a thermally conductive underfilldisposed between the photonics die and the TEC to facilitate heattransfer between the light emitting diode and the photonics die; whereinthe TEC comprises a top surface and a bottom surface such that thebottom surface of the TEC is attached to the housing and the top surfaceof the TEC is attached to the light emitting diode; wherein thephotonics die is attached to the TEC, with the light emitting diode andthe underfill interposed therebetween, such that a first surface of thelight emitting diode is in direct contact with the TEC and a secondsurface of the light emitting diode opposite the first surface of thelight emitting diode is in direct contact with the with photonics die;and wherein the photonics die is offset from the TEC in a horizontaldirection, providing an overhang of the photonics die over the TEC, suchthat the underfill does not interfere with the optical beam exiting thewaveguide.
 18. The system of claim 17, further comprising one or moreintegrated circuits positioned between the photonics die and the TEC andin direct thermal communication with both the photonics die and the TEC.